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سالهفتهIDTitleApplNoIPCApplicantSubgroupزیر گروهرشته شرحDescription
202602WO/2024/182939LIGHT-EMITTING SUBSTRATE, BACKLIGHT MODULE AND DISPLAY APPARATUSCN2023/079652H01L 25/16BOE TECHNOLOGY GROUP CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/007112SUBSTRATE FOR MOUNTING ELECTRONIC COMPONENT, ELECTRONIC MODULE, AND BASE STATIONCN2024/103936H01L 23/498TELEFONAKTIEBOLAGET LM ERICSSON (PUBL)ELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/007169PUMPING RING AND SEMICONDUCTOR PROCESSING DEVICECN2024/105689H01L 21/67PIOTECH (SHENYANG) SEMICONDUCTOR EQUIPMENT CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/007450POWER MODULE AND POWER DEVICECN2025/081695H01L 23/495HUAWEI DIGITAL POWER TECHNOLOGIES CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/007537OPTOELECTRONIC INTERCONNECTION PACKAGING STRUCTURE AND PREPARATION METHOD THEREFORCN2025/093617H01L 21/50SJ SEMICONDUCTOR (JIANGYIN) CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/007538OPTOELECTRONIC INTERCONNECTION PACKAGING STRUCTURE AND PREPARATION METHOD THEREFORCN2025/093618H01L 21/50SJ SEMICONDUCTOR (JIANGYIN) CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/007539OPTOELECTRONIC INTERCONNECTION PACKAGING STRUCTURE AND PREPARATION METHOD THEREFORCN2025/093619H01L 21/50SJ SEMICONDUCTOR (JIANGYIN) CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/007558EMBEDDED PACKAGING STRUCTURE AND PACKAGING METHODCN2025/095755H01L 25/16SHANGHAI FINE CHIP SEMICONDUCTOR CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/007744CARRYING APPARATUS, WAFER TRANSFER APPARATUS, AND SEMICONDUCTOR PROCESSING DEVICECN2025/103003H01L 21/687BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/007746POWER UNIT, THREE-PHASE FULL-BRIDGE POWER MODULE, POWER SUPPLY SYSTEM, AND VEHICLECN2025/103034H01L 25/07BYD COMPANY LIMITEDELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/008207INDUCTOR STRUCTURES IN HYBRID BONDED DEVICESEP2025/064066H01L 23/00INTERNATIONAL BUSINESS MACHINES CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/008571CHUCK SYSTEM, METHOD AND USE FOR HOLDING A SEMICONDUCTOR WAFER ON A CHUCKEP2025/068563H01L 21/67ATT ADVANCED TEMPERATURE TEST SYSTEMS GMBHELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/008677COOLED MANIPULATOR FOR ULTRAHIGH VACUUM-COMPATIBLE PROCESS DEVICE, ULTRAHIGH-VACUUM-COMPATIBLE PROCESS DEVICE, AND ULTRAHIGH VACUUM DEPOSITION METHODEP2025/068779H01L 21/67RIBERELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/009269HETERO-JUNCTION BIPOLAR TRANSISTORJP2024/023749H01L 29/737NTT, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/009270ACTIVE MATRIX SUBSTRATE, AND DISPLAY DEVICE AND X-RAY SENSOR DEVICE COMPRISING SAMEJP2024/023751H01L 29/786SHARP DISPLAY TECHNOLOGY CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/009272SEARCH DEVICE, DATA COMPRESSION PROCESSING DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING SYSTEM, SEARCH METHOD, AND DATA COMPRESSION PROCESSING METHODJP2024/023760H01L 21/3065HITACHI HIGH-TECH CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/009295SEMICONDUCTOR DEVICE MANUFACTURING SYSTEM, SERVER, AND FOREIGN OBJECT GENERATION FACTOR SPECIFYING METHODJP2024/023816H01L 21/02HITACHI HIGH-TECH CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/009326SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICEJP2024/023967H01L 25/07MITSUBISHI ELECTRIC CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/009340POWER CONVERTERJP2024/024027H01L 23/12MITSUBISHI ELECTRIC CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/009353SUBSTRATE PROCESSING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, PROGRAM, AND SUBSTRATE PROCESSING DEVICEJP2024/024131H01L 21/3065KOKUSAI ELECTRIC CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/009358SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICEJP2024/024152H01L 23/12ASTEMO, LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/009374METHOD FOR DETECTING MICROCRACKJP2024/024272H01L 21/66YAMAHA ROBOTICS HOLDINGS CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/009416POWER CONVERSION DEVICEJP2024/024415H01L 23/40MITSUBISHI ELECTRIC CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/009425SUBSTRATE STORAGE CONTAINER AND FILTER UNITJP2024/024453H01L 21/673MIRAIAL CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/009428SUBSTRATE STORAGE CONTAINER AND GAS JETTING NOZZLE PARTJP2024/024463H01L 21/673MIRAIAL CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/009461SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICEJP2024/037320H01L 23/52MITSUBISHI ELECTRIC CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/009462LEAD FRAME, SEMICONDUCTOR DEVICE, AND POWER CONVERSION DEVICEJP2024/037321H01L 23/52MITSUBISHI ELECTRIC CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/009548CIRCUIT MODULE AND SOLDERED CIRCUIT MODULEJP2025/015953H01L 23/28MURATA MANUFACTURING CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/009550ADHESIVE SHEET, PRECURSOR OF SEMICONDUCTOR DEVICE INCLUDING ADHESIVE SHEET, SEMICONDUCTOR DEVICE PRODUCED USING ADHESIVE SHEET, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE USING ADHESIVE SHEETJP2025/016206H01L 23/50TOMOEGAWA CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/009554SUBSTRATE BONDING DEVICEJP2025/016585H01L 21/02SCREEN HOLDINGS CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/009583MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUSJP2025/017842H01L 21/683NGK INSULATORS, LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/009595FOREIGN MATTER REMOVAL DEVICE AND FOREIGN MATTER REMOVAL METHODJP2025/018591H01L 21/304TOKYO ELECTRON LIMITEDELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/009597MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUSJP2025/018720H01L 21/683NGK INSULATORS, LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/009641VAPOR-PHASE GROWING APPARATUS AND VAPOR-PHASE GROWING METHODJP2025/020647H01L 21/205TAIYO NIPPON SANSO CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/009667ELECTRIC POWER CONVERTING DEVICEJP2025/021280H01L 23/40HITACHI, LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/009678ELECTROSTATIC CHUCK DEVICE, METHOD FOR MANUFACTURING ELECTROSTATIC CHUCK DEVICE, AND METHOD FOR MANUFACTURING STACKJP2025/021463H01L 21/683SUMITOMO OSAKA CEMENT CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/009713SUBSTRATE SUPPORT DEVICE, SUBSTRATE PROCESSING APPARATUS, AND BASEJP2025/022020H01L 21/683TOKYO ELECTRON LIMITEDELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/009716SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHODJP2025/022048H01L 21/3065TOKYO ELECTRON LIMITEDELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/009751LIQUID TREATMENT DEVICE, LIQUID TREATMENT METHOD, AND LIQUID FLOW REGULATION MEMBERJP2025/022553H01L 21/306TOKYO ELECTRON LIMITEDELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/009769FILM FORMING METHOD, FILM FORMING APPARATUS, AND SEMICONDUCTOR DEVICEJP2025/022673H01L 21/365TOKYO ELECTRON LIMITEDELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/009773COMPONENT ASSEMBLY USED IN SEMICONDUCTOR MANUFACTURING DEVICE, ELECTRODE PLATE USED IN SUBSTRATE PROCESSING DEVICE, POSITIONING METHOD, AND SEMICONDUCTOR MANUFACTURING DEVICEJP2025/022735H01L 21/3065TOKYO ELECTRON LIMITEDELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/009813WAFER MOUNTING STANDJP2025/023090H01L 21/683NGK INSULATORS, LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/009814WAFER MOUNTING STANDJP2025/023091H01L 21/683NGK INSULATORS, LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/009830RELEASE AGENT COMPOSITION, LAMINATE, AND PRODUCTION METHOD FOR PROCESSED SEMICONDUCTOR SUBSTRATEJP2025/023205H01L 21/02NISSAN CHEMICAL CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/009872MOUNTING DEVICE, MOUNTING METHOD, AND MOUNTING CONTROL PROGRAMJP2025/023537H01L 21/60YAMAHA ROBOTICS HOLDINGS CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/009887WIRING BOARD AND ELECTRONIC MODULEJP2025/023612H01L 23/12KYOCERA CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/009977SUBSTRATE FOR SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR DEVICEJP2025/024229H01L 23/50MITSUI HIGH-TEC, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/009999METHOD FOR MANUFACTURING DISPLAY DEVICE USING LIGHT-EMITTING ELEMENT AND DEVICE FOR MANUFACTURING SAMEKR2024/009218H01L 23/00LG ELECTRONICS INC.ELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/010196SUBSTRATE BONDING APPARATUSKR2025/008166H01L 21/67ZEUS CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/010282SEMICONDUCTOR PACKAGE BONDING METHOD AND SEMICONDUCTOR PACKAGE BONDING APPARATUS USED THEREFORKR2025/009209H01L 23/00IUCF-HYU(INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)ELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/010361ELECTRONIC DEVICE AND ELECTRONIC DEVICE CONTROL METHODKR2025/009431H01L 21/02JUSUNG ENGINEERING CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/010367SIONC THIN FILM AND METHOD FOR MANUFACTURING SAMEKR2025/009443H01L 21/02IUCF-HYU(INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)ELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/010555GRAPHENE-BASED THERMAL INTERFACE PAD HAVING A CURVED SURFACE AND METHOD FOR MANUFACTURING THE PADSE2025/050649H01L 23/373SHT SMART HIGH-TECH ABELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/010654INTEGRATED DEVICES AND METHOD FOR MANUFACTURING SAMEUS2025/017238H01L 21/02MICROCHIP TECHNOLOGY INCORPORATEDELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/010661ENHANCED BACK VIA LANDING METAL LAYER ADHESIONUS2025/022777H01L 21/768MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/010662SELECTIVE DEPOSITION ON AN EXISTING PATTERNED MASKUS2025/022805H01L 21/033TOKYO ELECTRON LIMITEDELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/010664METHOD FOR SEMICONDUCTOR PROCESSINGUS2025/024601H01L 21/285TOKYO ELECTRON LIMITEDELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/010689SUBSTRATE FOR SEMICONDUCTOR FABRICATION HAVING SELECTIVELY TREATED PERIMETER AND METHOD OF TREATINGUS2025/031167H01L 23/15APPLIED MATERIALS, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/010690SELECTIVE MATERIAL DEPOSITIONUS2025/031508H01L 21/768APPLIED MATERIALS, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/010709INTERCONNECT SUBSTRATE AND METHOD OF MAKINGUS2025/033102H01L 23/538DECA TECHNOLOGIES USA, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/010718MODULARIZED CONSTRUCT FOR COMPLEX MULTI-DIE INTEGRATION PACKAGEUS2025/033362H01L 25/065ADVANCED MICRO DEVICES, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/010728THREE-DIMENSIONAL CLEAVAGE TECHNIQUES USING STEALTH DICING, AND ASSOCIATED SYSTEMS AND METHODSUS2025/033849H01L 21/78MICRON TECHNOLOGY, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/010759SELECTIVE ETCHING OF SILICON NITRIDE DIELECTRICS WITH MICROWAVE OXIDATIONUS2025/034903H01L 21/311APPLIED MATERIALS, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/010781DOPED DIELECTRIC PACKAGING FILMUS2025/035233H01L 21/56LAM RESEARCH CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/010782CARRIER RING DESIGNSUS2025/035242H01L 21/687LAM RESEARCH CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/010805HYBRID BONDING OF SEMICONDUCTOR CMOS WAFER AND SEMICONDUCTOR MEMORY ARRAY WAFER USING DEBONDABLE CARRIERSUS2025/035556H01L 23/00MICRON TECHNOLOGY, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/010811REDUCED UNDERLAYER OXIDATION DURING GAP FILLUS2025/035586H01L 21/762APPLIED MATERIALS, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/010815METHODS OF DEPOSITING SILICON-CONTAINING FILMS FOR SEMICONDUCTOR DEVICESUS2025/035618H01L 21/02APPLIED MATERIALS, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/010834SUBSTRATE SUPPORT ASSEMBLY HAVING AN INTEGRATED SPRING PRESSURE PLATEUS2025/035789H01L 21/687APPLIED MATERIALS, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/010856DUMMY COMPONENTS IN INTEGRATED CIRCUITSUS2025/035892H01L 21/762TEXAS INSTRUMENTS INCORPORATEDELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/010891HYBRID RESISTOR WITH ORIENTED HYBRID INSULATION LAYERSUS2025/035977H01L 21/02ATLAS MAGNETICSELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/010988BUILD UP BONDING LAYER PROCESS AND STRUCTURE FOR LOW TEMPERATURE COPPER BONDINGUS2025/036134H01L 23/528ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.ELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/011058REDUNDANT BOND PADS IN STACKED SEMICONDUCTOR ARCHITECTURESUS2025/036263H01L 23/522MICRON TECHNOLOGY, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202602WO/2026/011161SUBSTRATE CONTAINER ADAPTERUS2025/036519H01L 21/673ENTEGRIS, INC.ELECTRICITYالکتریسیتهدانش هسته ای