| سال | هفته | ID | Title | ApplNo | IPC | Applicant | Subgroup | زیر گروه | رشته | شرح | Description |
|---|
2026 | 02 | WO/2024/182939 | LIGHT-EMITTING SUBSTRATE, BACKLIGHT MODULE AND DISPLAY APPARATUS | CN2023/079652 | H01L 25/16 | BOE TECHNOLOGY GROUP CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/007112 | SUBSTRATE FOR MOUNTING ELECTRONIC COMPONENT, ELECTRONIC MODULE, AND BASE STATION | CN2024/103936 | H01L 23/498 | TELEFONAKTIEBOLAGET LM ERICSSON (PUBL) | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/007169 | PUMPING RING AND SEMICONDUCTOR PROCESSING DEVICE | CN2024/105689 | H01L 21/67 | PIOTECH (SHENYANG) SEMICONDUCTOR EQUIPMENT CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/007450 | POWER MODULE AND POWER DEVICE | CN2025/081695 | H01L 23/495 | HUAWEI DIGITAL POWER TECHNOLOGIES CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/007537 | OPTOELECTRONIC INTERCONNECTION PACKAGING STRUCTURE AND PREPARATION METHOD THEREFOR | CN2025/093617 | H01L 21/50 | SJ SEMICONDUCTOR (JIANGYIN) CORPORATION | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/007538 | OPTOELECTRONIC INTERCONNECTION PACKAGING STRUCTURE AND PREPARATION METHOD THEREFOR | CN2025/093618 | H01L 21/50 | SJ SEMICONDUCTOR (JIANGYIN) CORPORATION | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/007539 | OPTOELECTRONIC INTERCONNECTION PACKAGING STRUCTURE AND PREPARATION METHOD THEREFOR | CN2025/093619 | H01L 21/50 | SJ SEMICONDUCTOR (JIANGYIN) CORPORATION | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/007558 | EMBEDDED PACKAGING STRUCTURE AND PACKAGING METHOD | CN2025/095755 | H01L 25/16 | SHANGHAI FINE CHIP SEMICONDUCTOR CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/007744 | CARRYING APPARATUS, WAFER TRANSFER APPARATUS, AND SEMICONDUCTOR PROCESSING DEVICE | CN2025/103003 | H01L 21/687 | BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/007746 | POWER UNIT, THREE-PHASE FULL-BRIDGE POWER MODULE, POWER SUPPLY SYSTEM, AND VEHICLE | CN2025/103034 | H01L 25/07 | BYD COMPANY LIMITED | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/008207 | INDUCTOR STRUCTURES IN HYBRID BONDED DEVICES | EP2025/064066 | H01L 23/00 | INTERNATIONAL BUSINESS MACHINES CORPORATION | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/008571 | CHUCK SYSTEM, METHOD AND USE FOR HOLDING A SEMICONDUCTOR WAFER ON A CHUCK | EP2025/068563 | H01L 21/67 | ATT ADVANCED TEMPERATURE TEST SYSTEMS GMBH | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/008677 | COOLED MANIPULATOR FOR ULTRAHIGH VACUUM-COMPATIBLE PROCESS DEVICE, ULTRAHIGH-VACUUM-COMPATIBLE PROCESS DEVICE, AND ULTRAHIGH VACUUM DEPOSITION METHOD | EP2025/068779 | H01L 21/67 | RIBER | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/009269 | HETERO-JUNCTION BIPOLAR TRANSISTOR | JP2024/023749 | H01L 29/737 | NTT, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/009270 | ACTIVE MATRIX SUBSTRATE, AND DISPLAY DEVICE AND X-RAY SENSOR DEVICE COMPRISING SAME | JP2024/023751 | H01L 29/786 | SHARP DISPLAY TECHNOLOGY CORPORATION | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/009272 | SEARCH DEVICE, DATA COMPRESSION PROCESSING DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING SYSTEM, SEARCH METHOD, AND DATA COMPRESSION PROCESSING METHOD | JP2024/023760 | H01L 21/3065 | HITACHI HIGH-TECH CORPORATION | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/009295 | SEMICONDUCTOR DEVICE MANUFACTURING SYSTEM, SERVER, AND FOREIGN OBJECT GENERATION FACTOR SPECIFYING METHOD | JP2024/023816 | H01L 21/02 | HITACHI HIGH-TECH CORPORATION | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/009326 | SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE | JP2024/023967 | H01L 25/07 | MITSUBISHI ELECTRIC CORPORATION | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/009340 | POWER CONVERTER | JP2024/024027 | H01L 23/12 | MITSUBISHI ELECTRIC CORPORATION | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/009353 | SUBSTRATE PROCESSING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, PROGRAM, AND SUBSTRATE PROCESSING DEVICE | JP2024/024131 | H01L 21/3065 | KOKUSAI ELECTRIC CORPORATION | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/009358 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE | JP2024/024152 | H01L 23/12 | ASTEMO, LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/009374 | METHOD FOR DETECTING MICROCRACK | JP2024/024272 | H01L 21/66 | YAMAHA ROBOTICS HOLDINGS CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/009416 | POWER CONVERSION DEVICE | JP2024/024415 | H01L 23/40 | MITSUBISHI ELECTRIC CORPORATION | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/009425 | SUBSTRATE STORAGE CONTAINER AND FILTER UNIT | JP2024/024453 | H01L 21/673 | MIRAIAL CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/009428 | SUBSTRATE STORAGE CONTAINER AND GAS JETTING NOZZLE PART | JP2024/024463 | H01L 21/673 | MIRAIAL CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/009461 | SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE | JP2024/037320 | H01L 23/52 | MITSUBISHI ELECTRIC CORPORATION | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/009462 | LEAD FRAME, SEMICONDUCTOR DEVICE, AND POWER CONVERSION DEVICE | JP2024/037321 | H01L 23/52 | MITSUBISHI ELECTRIC CORPORATION | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/009548 | CIRCUIT MODULE AND SOLDERED CIRCUIT MODULE | JP2025/015953 | H01L 23/28 | MURATA MANUFACTURING CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/009550 | ADHESIVE SHEET, PRECURSOR OF SEMICONDUCTOR DEVICE INCLUDING ADHESIVE SHEET, SEMICONDUCTOR DEVICE PRODUCED USING ADHESIVE SHEET, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE USING ADHESIVE SHEET | JP2025/016206 | H01L 23/50 | TOMOEGAWA CORPORATION | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/009554 | SUBSTRATE BONDING DEVICE | JP2025/016585 | H01L 21/02 | SCREEN HOLDINGS CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/009583 | MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS | JP2025/017842 | H01L 21/683 | NGK INSULATORS, LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/009595 | FOREIGN MATTER REMOVAL DEVICE AND FOREIGN MATTER REMOVAL METHOD | JP2025/018591 | H01L 21/304 | TOKYO ELECTRON LIMITED | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/009597 | MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS | JP2025/018720 | H01L 21/683 | NGK INSULATORS, LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/009641 | VAPOR-PHASE GROWING APPARATUS AND VAPOR-PHASE GROWING METHOD | JP2025/020647 | H01L 21/205 | TAIYO NIPPON SANSO CORPORATION | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/009667 | ELECTRIC POWER CONVERTING DEVICE | JP2025/021280 | H01L 23/40 | HITACHI, LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/009678 | ELECTROSTATIC CHUCK DEVICE, METHOD FOR MANUFACTURING ELECTROSTATIC CHUCK DEVICE, AND METHOD FOR MANUFACTURING STACK | JP2025/021463 | H01L 21/683 | SUMITOMO OSAKA CEMENT CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/009713 | SUBSTRATE SUPPORT DEVICE, SUBSTRATE PROCESSING APPARATUS, AND BASE | JP2025/022020 | H01L 21/683 | TOKYO ELECTRON LIMITED | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/009716 | SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD | JP2025/022048 | H01L 21/3065 | TOKYO ELECTRON LIMITED | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/009751 | LIQUID TREATMENT DEVICE, LIQUID TREATMENT METHOD, AND LIQUID FLOW REGULATION MEMBER | JP2025/022553 | H01L 21/306 | TOKYO ELECTRON LIMITED | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/009769 | FILM FORMING METHOD, FILM FORMING APPARATUS, AND SEMICONDUCTOR DEVICE | JP2025/022673 | H01L 21/365 | TOKYO ELECTRON LIMITED | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/009773 | COMPONENT ASSEMBLY USED IN SEMICONDUCTOR MANUFACTURING DEVICE, ELECTRODE PLATE USED IN SUBSTRATE PROCESSING DEVICE, POSITIONING METHOD, AND SEMICONDUCTOR MANUFACTURING DEVICE | JP2025/022735 | H01L 21/3065 | TOKYO ELECTRON LIMITED | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/009813 | WAFER MOUNTING STAND | JP2025/023090 | H01L 21/683 | NGK INSULATORS, LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/009814 | WAFER MOUNTING STAND | JP2025/023091 | H01L 21/683 | NGK INSULATORS, LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/009830 | RELEASE AGENT COMPOSITION, LAMINATE, AND PRODUCTION METHOD FOR PROCESSED SEMICONDUCTOR SUBSTRATE | JP2025/023205 | H01L 21/02 | NISSAN CHEMICAL CORPORATION | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/009872 | MOUNTING DEVICE, MOUNTING METHOD, AND MOUNTING CONTROL PROGRAM | JP2025/023537 | H01L 21/60 | YAMAHA ROBOTICS HOLDINGS CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/009887 | WIRING BOARD AND ELECTRONIC MODULE | JP2025/023612 | H01L 23/12 | KYOCERA CORPORATION | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/009977 | SUBSTRATE FOR SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR DEVICE | JP2025/024229 | H01L 23/50 | MITSUI HIGH-TEC, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/009999 | METHOD FOR MANUFACTURING DISPLAY DEVICE USING LIGHT-EMITTING ELEMENT AND DEVICE FOR MANUFACTURING SAME | KR2024/009218 | H01L 23/00 | LG ELECTRONICS INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/010196 | SUBSTRATE BONDING APPARATUS | KR2025/008166 | H01L 21/67 | ZEUS CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/010282 | SEMICONDUCTOR PACKAGE BONDING METHOD AND SEMICONDUCTOR PACKAGE BONDING APPARATUS USED THEREFOR | KR2025/009209 | H01L 23/00 | IUCF-HYU(INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/010361 | ELECTRONIC DEVICE AND ELECTRONIC DEVICE CONTROL METHOD | KR2025/009431 | H01L 21/02 | JUSUNG ENGINEERING CO., LTD. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/010367 | SIONC THIN FILM AND METHOD FOR MANUFACTURING SAME | KR2025/009443 | H01L 21/02 | IUCF-HYU(INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/010555 | GRAPHENE-BASED THERMAL INTERFACE PAD HAVING A CURVED SURFACE AND METHOD FOR MANUFACTURING THE PAD | SE2025/050649 | H01L 23/373 | SHT SMART HIGH-TECH AB | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/010654 | INTEGRATED DEVICES AND METHOD FOR MANUFACTURING SAME | US2025/017238 | H01L 21/02 | MICROCHIP TECHNOLOGY INCORPORATED | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/010661 | ENHANCED BACK VIA LANDING METAL LAYER ADHESION | US2025/022777 | H01L 21/768 | MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/010662 | SELECTIVE DEPOSITION ON AN EXISTING PATTERNED MASK | US2025/022805 | H01L 21/033 | TOKYO ELECTRON LIMITED | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/010664 | METHOD FOR SEMICONDUCTOR PROCESSING | US2025/024601 | H01L 21/285 | TOKYO ELECTRON LIMITED | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/010689 | SUBSTRATE FOR SEMICONDUCTOR FABRICATION HAVING SELECTIVELY TREATED PERIMETER AND METHOD OF TREATING | US2025/031167 | H01L 23/15 | APPLIED MATERIALS, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/010690 | SELECTIVE MATERIAL DEPOSITION | US2025/031508 | H01L 21/768 | APPLIED MATERIALS, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/010709 | INTERCONNECT SUBSTRATE AND METHOD OF MAKING | US2025/033102 | H01L 23/538 | DECA TECHNOLOGIES USA, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/010718 | MODULARIZED CONSTRUCT FOR COMPLEX MULTI-DIE INTEGRATION PACKAGE | US2025/033362 | H01L 25/065 | ADVANCED MICRO DEVICES, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/010728 | THREE-DIMENSIONAL CLEAVAGE TECHNIQUES USING STEALTH DICING, AND ASSOCIATED SYSTEMS AND METHODS | US2025/033849 | H01L 21/78 | MICRON TECHNOLOGY, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/010759 | SELECTIVE ETCHING OF SILICON NITRIDE DIELECTRICS WITH MICROWAVE OXIDATION | US2025/034903 | H01L 21/311 | APPLIED MATERIALS, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/010781 | DOPED DIELECTRIC PACKAGING FILM | US2025/035233 | H01L 21/56 | LAM RESEARCH CORPORATION | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/010782 | CARRIER RING DESIGNS | US2025/035242 | H01L 21/687 | LAM RESEARCH CORPORATION | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/010805 | HYBRID BONDING OF SEMICONDUCTOR CMOS WAFER AND SEMICONDUCTOR MEMORY ARRAY WAFER USING DEBONDABLE CARRIERS | US2025/035556 | H01L 23/00 | MICRON TECHNOLOGY, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/010811 | REDUCED UNDERLAYER OXIDATION DURING GAP FILL | US2025/035586 | H01L 21/762 | APPLIED MATERIALS, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/010815 | METHODS OF DEPOSITING SILICON-CONTAINING FILMS FOR SEMICONDUCTOR DEVICES | US2025/035618 | H01L 21/02 | APPLIED MATERIALS, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/010834 | SUBSTRATE SUPPORT ASSEMBLY HAVING AN INTEGRATED SPRING PRESSURE PLATE | US2025/035789 | H01L 21/687 | APPLIED MATERIALS, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/010856 | DUMMY COMPONENTS IN INTEGRATED CIRCUITS | US2025/035892 | H01L 21/762 | TEXAS INSTRUMENTS INCORPORATED | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/010891 | HYBRID RESISTOR WITH ORIENTED HYBRID INSULATION LAYERS | US2025/035977 | H01L 21/02 | ATLAS MAGNETICS | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/010988 | BUILD UP BONDING LAYER PROCESS AND STRUCTURE FOR LOW TEMPERATURE COPPER BONDING | US2025/036134 | H01L 23/528 | ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/011058 | REDUNDANT BOND PADS IN STACKED SEMICONDUCTOR ARCHITECTURES | US2025/036263 | H01L 23/522 | MICRON TECHNOLOGY, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای | 2026 | 02 | WO/2026/011161 | SUBSTRATE CONTAINER ADAPTER | US2025/036519 | H01L 21/673 | ENTEGRIS, INC. | ELECTRICITY | الکتریسیته | دانش هسته ای |